Simulation of plasma doping process by using the localized molecular dynamics method

被引：0

作者：

冀会辉 ^{[1
,2
]}

于民 ^{[1
]}

任黎明 ^{[1
]}

张兴 ^{[1
]}

黄如 ^{[1
]}

张有光 ^{[2
]}

机构：

[1] Department of Microelectronics,Peking University

[2] School of Electronic and Information Engineering,Beihang University

来源：

Chinese Physics B | 2008年 / 17卷 / 09期

关键词：

plasma doping; simulation; molecular dynamics;

D O I：

暂无

中图分类号：

O483 [固体缺陷];

学科分类号：

070205 ; 0805 ; 080502 ; 0809 ;

摘要：

Plasma doping is the candidate for semiconductor doping.Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing.In this paper,the plasma doping process simulation is performed by using the localized molecular dynamics method.Models that involve the statistics of the implanted compositions,angles and energies are developed.The effect of the model on simulation results is studied.The simulation results about the doping concentration profile are supported by experimental data.

引用

页码：3428 / 3432

页数：5

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