Research of organic field effect transistors based on semiconducting single-walled carbon nanotubes

被引：0

作者：

杨小艳 ^{[1
]}

吴晓明 ^{[1
]}

姜春霞 ^{[1
]}

韩雪松 ^{[1
]}

高志琪 ^{[1
]}

申利莹 ^{[1
]}

魏军 ^{[1
,2
]}

印寿根 ^{[1
]}

机构：

[1] Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education of China,Institute of Material Physics,Tianjin University of Technology

[2] Singapore Institute of Manufacturing Technology,71 Nanyang Drive

来源：

OptoelectronicsLetters | 2012年 / 8卷 / 04期

基金：

中国国家自然科学基金;

关键词：

SWNTs; Research of organic field effect transistors based on semiconducting single-walled carbon nanotubes;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

The metal-conducting single-walled carbon nanotubes(m-SWNTs)with small diameters(0.7 nm-1.1 nm)are selectively removed from the single-walled carbon nanotubes(SWNTs)by using HNO 3 /H 2 SO 4 mixed solution.Semiconducting single-walled carbon nanotubes(s-SWNTs)can be separated efficiently from the SWNTs with high controllability and purity based on this novel method,and the outcome is characterized by Raman spectrum.Moreover,the organic field effect transistors(OFETs)are fabricated based on the poly(3-hexylthiophene-2,5-diyl)(P3HT),and untreated SWNTs and separated SWNTs(s-SWNTs)are mixed with P3HT,respectively.It could be found that the P3HT/s-SWNT device exhibits a better field effect characteristic compared with the P3HT device.The current on/off ratio is increased by 4 times,the threshold voltage is also increased from-28 V to-22 V,and the mobility is increased from 3×10-3 cm2/Vs to 5×10-3 cm2/Vs.

引用

页码：260 / 263

页数：4

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