Topological insulator nanostructures and devices

被引：0
作者：
修发贤
赵彤彤
机构：
[1] StateKeyLaboratoryofSurfacePhysicsandDepartmentofPhysics,FudanUniversity
来源：
Chinese Physics B | 2013年 / 09期
关键词：
topological insulators; nanostructures; quantum spin Hall effect; Aharonov-Bohm effect;
D O I：
暂无
中图分类号：
TM21 [绝缘材料、电介质及其制品];
学科分类号：
0805 ; 080502 ; 080801 ;
摘要：
Topological insulators' properties and their potential device applications are reviewed. We also explain why topological insulator (TI) nanostructures are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to exploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.
引用
收藏
页码：44 / 57
页数：14
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