Light-emission Properties Of Europium-doped tantalum-oxide thin films deposited by radio-frequency magnetron sputtering
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作者:
Miura, Kenta
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Department of Electronic Engeneering, Graduate School of Engeneering, Gamma University, JapanDepartment of Electronic Engeneering, Graduate School of Engeneering, Gamma University, Japan
Miura, Kenta
[1
]
Arai, Yuki
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Department of Electronic Engeneering, Graduate School of Engeneering, Gamma University, JapanDepartment of Electronic Engeneering, Graduate School of Engeneering, Gamma University, Japan
Arai, Yuki
[1
]
Osawa, Takumi
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Department of Electronic Engeneering, Graduate School of Engeneering, Gamma University, JapanDepartment of Electronic Engeneering, Graduate School of Engeneering, Gamma University, Japan
Osawa, Takumi
[1
]
Hanaizumi, Osamu
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Department of Electronic Engeneering, Graduate School of Engeneering, Gamma University, JapanDepartment of Electronic Engeneering, Graduate School of Engeneering, Gamma University, Japan
Hanaizumi, Osamu
[1
]
机构:
[1] Department of Electronic Engeneering, Graduate School of Engeneering, Gamma University, Japan
Light-emitting europium-doped tantalum-oxide thin films were prepared by radio-frequency magnetron sputtering. Red photoluminescence was obtained from the films after annealing by ultraviolet-laser excitation. Four peaks having wavelengths of around 600, 620, 650, and 700 nm were observed from films annealed at 600 to 900°C. The strongest intensity of the most remarkable 620-nm peak was obtained from the film annealed at 700°C for 20 min.