Failure Mechanism Analysis of SiC MOSFET under Different Aging Test Methods

被引：0

作者：

Chen J. ^{[1
]}

Deng E. ^{[1
,2
]}

Zhao Z. ^{[1
]}

Wu Y. ^{[1
]}

Huang Y. ^{[1
,2
]}

机构：

[1] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electrical Power University, Beijing

[2] NCEPU (Yantai) Power Semiconductor Technology Research Institute Co. Ltd, Yantai

来源：

Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2020年 / 35卷 / 24期

关键词：

Conduction mode; Failure mechanism; Junction temperature measurement; Power cycling test; SiC MOSFET; Threshold voltage drift;

D O I：

10.19595/j.cnki.1000-6753.tces.191409

中图分类号：

学科分类号：

摘要：

SiC MOSFETs are gradually entering the market due to their excellent electrothermal characteristics, and their long-term reliability has become the focus of attention. The power cycling test is the most important aging test for device reliability assessment. MOSFET has three conduction modes corresponding to three different power cycling test methods. To study and compare the failure mechanism and failure parameters evolution of SiC MOSFET under different aging test methods, the power cycling tests were carried out under different modes, focusing on forward MOSFET mode and body diode mode. Since the interface trap in the SiC MOSFET can cause the threshold voltage drift, a judgment criterion and a corresponding power cycling test method were proposed to minimize the influence of the threshold voltage drift on the test result. The on-line measurement of junction temperature, on-state voltage drop and thermal resistance during the test were achieved. The results show that the main failure mode in both modes is bond wire fatigue, but the electrothermal feedback mechanism after bonding wire fatigue is different, resulting in different degradation laws and lifespan. The life in diode mode is about twice that in the forward MOSFET mode under the same thermal conditions. © 2020, Electrical Technology Press Co. Ltd. All right reserved.

引用

页码：5105 / 5114

页数：9

共 22 条

[1]

Ke Junji, Zhao Zhibin, Xie Zongkui, Et al., Analytical switching transient model for silicon carbide MOSFET under the influence of parasitic para-meters, Transactions of China Electrotechnical Society, 33, 8, pp. 1762-1774, (2018)

[2]

Wang Lina, Deng Jie, Yang Junyi, Et al., Junction temperature extraction methods for Si and SiC power devices-a review and possible alternatives, Transactions of China Electrotechnical Society, 34, 4, pp. 703-716, (2019)

[3]

Zhou Lin, Li Hanjiang, Xie Bao, Et al., Saber modeling of SiC MOSFET and its application and analysis in photovoltaic grid-connected inverter, Transactions of China Electrotechnical Society, 34, 20, pp. 4251-4263, (2019)

[4]

Sheng Kuang, Maximum junction temperatures of SiC power devices, IEEE Transactions on Elec-tronic Devices, 56, 2, pp. 337-342, (2009)

[5]

Qi Feng, Wang Miao, Xu Longya, Investigation and review of challenges in a high temperature 30kVA 3-phase inverter using SiC MOSFETs, IEEE Transactions on Industry Applications, 54, 3, pp. 2483-2491, (2018)

[6]

Herold C, Schaefer M, Sauerland F, Et al., Power cycling capability of modules with SiC-diodes, International Conference on Integrated Power Systems, (2014)

[7]

Hu Borong, Gonzalez J O, Li Ran, Et al., Failure and reliability analysis of a SiC power module based on stress comparison to a Si device, IEEE Transa-ctions on Device and Materials Reliability, 17, 4, pp. 727-737, (2017)

[8]

Zhang Jingwei, Deng Erping, Zhao Zhibin, Et al., Simulation on fatigue failure of single IGBT chip module of press-pack IGBTs, Transactions of China Electrotechnical Society, 33, 18, pp. 4277-4285, (2018)

[9]

Herold C, Sun Jian, Seidel P, Et al., Power cycling methods for SiC MOSFETs, 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp. 367-370, (2017)

[10]

Schwabe C, Seidel P, Lutz J., Power cycling capability of silicon low-voltage MOSFETs under different operation conditions, 31th International Symposium on Power Semiconductor Devices and IC's (ISPSD), (2019)

← 1 2 3 →