Design and optimization of inverted metamorphic GaInP/GaAs/InGaAs triple junction solar cell

被引：0

作者：

Ma, Dayan ^{[1
]}

Chen, Nuofu ^{[1
]}

Fu, Rui ^{[1
]}

Liu, Hu ^{[1
,2
]}

Bai, Yiming ^{[1
]}

Chen, Jikun ^{[3
]}

机构：

[1] School of Renewable Energy Sources, North China Electric Power University, Beijing,102206, China

[2] Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang,050041, China

[3] School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing,100083, China

来源：

Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2018年 / 39卷 / 02期

关键词：

Solar cells - Gallium alloys - Indium alloys - Photoelectricity - Energy gap - Semiconductor junctions - Semiconductor alloys;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Based on the p-n junction formation mechanism and meticulous equilibrium condition, the gap of inverted metamorphic GaInP(1.90 eV)/GaAs/InGaAs battery system and the thickness of each sub-cell were simulated and optimized by using Matlab language. The results showed that the bottom cell band gap of 1.0 eV has the highest conversion efficiency. By optimizing the junction thickness of GaInP (1.90 eV)/GaAs(1.42 eV)/InGaAs(1.0 eV) inverted metamorphic triple junction solar cell and considering the material cost and production technology, the optimal thickness combination is 1.35, 2.83 and 3.19 μm, the photoelectric conversion efficiency is 44.4%, only 0.3% lower than the maximum conversion efficiency. © 2018, Editorial Board of Acta Energiae Solaris Sinica. All right reserved.

引用

页码：550 / 557