A comparison of processes and challenges between organic, a-Si:H, and oxide TFTs for active matrix backplanes on plastic

被引：0

作者：

De La Fuente Vornbrock, Alejandro ^{[1
]}

Almanza-Workman, Marcia ^{[2
]}

Dickin, Fraser ^{[3
]}

Elder, Richard E. ^{[1
]}

Garcia, Robert A. ^{[2
]}

Holland, Edward ^{[1
]}

Jackson, Warren ^{[1
]}

Jam, Mehrban ^{[1
]}

Jeans, Albert ^{[1
]}

Kim, Han-Jun ^{[2
]}

Kwon, Ohseung ^{[2
]}

Luo, Hao ^{[1
]}

Maltabes, John ^{[1
]}

Mei, Ping ^{[1
]}

Perlov, Craig ^{[1
]}

Rudin, John C. ^{[3
]}

Smith, Mark ^{[1
]}

Trovinger, Steven ^{[1
]}

Zhao, Lihua ^{[1
]}

Taussig, Carl P. ^{[1
]}

机构：

[1] Hewlett Packard Laboratories, 1501 Page Mill Rd, MS 1198, Palo Alto, CA, 94303-1100, United States

[2] Phicot, Inc., 1501 Page Mill Rd, MS 1198, Palo Alto, CA, 94303-1100, United States

[3] Hewlett Packard Laboratories, Long Down Avenue, Stoke Gifford, Bristol, BS34 8QZ, United Kingdom

来源：

HP Laboratories Technical Report | 2012年 / 66期

关键词：

Amorphous films - Flexible displays - Thin film transistors - II-VI semiconductors - Substrates - Tin oxides - Silicon compounds - Zinc oxide - Flat panel displays;

D O I：

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学科分类号：

摘要：

Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a-Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm 2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm2/Vs), and a-Si:H (0.5 cm 2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a-Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies. © Copyright 2012 Hewlett-Packard Development Company, L.P.

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