Gate-defined Kondo lattices with valley-helical quantum dot arrays

被引：0

作者：

Manesco, Antonio L. R. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

来源：

SCIPOST PHYSICS | 2025年 / 19卷 / 01期

关键词：

FERMI-SURFACE; BAND-STRUCTURE; SUPERCONDUCTIVITY; ELECTRONS; EXPANSION; MAGNETISM; BEHAVIOR;

D O I：

10.21468/SciPostPhys.19.1.024

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Kondo physics and heavy-fermion behavior has been predicted and observed in moir & eacute; materials. The electric tunability of moir & eacute; materials allows an in-situ study of Kondo lattices' phase diagrams, which is not possible with their intermetallic counterparts. However, moir & eacute; platforms rely on twisting, which introduces twisting angle disorder and undesired buckling. Here we propose device layouts for one- and two-dimensional gate-defined superlattices in Bernal bilayer graphene where localized states couple to dispersive valley-helical modes. We show that, under electronic interactions, these superlattices are described by an electrically-tunable Kondo-Heisenberg model.

引用

页数：16

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