In-depth electromagnetic analysis of ESD protection for advanced CMOS technology during fast transient and high-current surge

被引：9

作者：

Galy, Philippe ^{[1
]}

Schoenmaker, Wim ^{[2
]}

机构：

[1] STMicroelectronics, Crolles 38926, France

[2] Magwel NV, Leuven B-3000, Belgium

来源：

IEEE Transactions on Electron Devices | 2014年 / 61卷 / 06期

关键词：

CMOS integrated circuits - Electric lines - Electrostatic devices - Maxwell equations - Power quality - Transients - Electromagnetic simulation - Electrostatic discharge - Lorentz force;

D O I：

10.1109/TED.2014.2314485

中图分类号：

学科分类号：

摘要：

The purpose of this paper is to present the main results of an electrostatic discharge (ESD) protection for advanced CMOS technology with electromagnetic (EM) field effect and Lorentz Force (LF) contributions during fast transient and high-current surge. To address this goal, the first step is building a tool to simulate fast transient conditions with all participating physical mechanisms included. The relevant equations describing these mechanisms are: 1) the charge transport equations and 2) the Maxwell equations to describe the EM fields. The LF is also included using an extended formulation of the current-continuity equations. An integrated approach is followed to simulate the full structure (metal connections + silicon device) during the ESD surge and to compare the results between ElectroMagnetic Lorentz Force simulations and transmission line pulse measurements. Obviously, in general, this paper and tool can be used to address electromagnetic compatibility topics and more. © 1963-2012 IEEE.

引用

页码：1900 / 1906