Ferroelectric, dielectric and electrical behavior of two-dimensional lead sulphide nanosheets

被引：15
作者：
Afsar M.F. [1 ,2 ]
Jamil A. [1 ,2 ]
Rafiq M.A. [2 ]
机构：
[1] Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore Islamabad
[2] Department of Metallurgy and Materials Engineering, Micro and Nano Devices Group, Pakistan Institute of Engineering and Applied Sciences, Nilore Islamabad
来源：
Advances in Natural Sciences: Nanoscience and Nanotechnology | 2017年 / 8卷 / 04期
关键词：
conduction mechanism; density of states; dielectric; ferroelectric; lead sulphide; nanosheets;
D O I：
10.1088/2043-6254/aa8b3d
中图分类号：
学科分类号：
摘要：
Two-dimensional pure cubic phase lead sulphide (PbS) nanosheets were synthesized using solid state reaction method at ambient pressure and low temperature ∼190 °C. From 210 K-300 K, small polaron hopping conduction mechanism was found to be dominant in PbS nanosheets at frequencies 20 Hz-2 MHz. High values of dielectric constant (∼200) and electrical conductivity (of the order of 10-3S m-1at 300 K) of PbS nanosheets were extracted suggesting that it is a proficient material for capacitive storage devices. A high value of density of states of the order of 1032eV-1cm-3was obtained for PbS nanosheets. The capacitance-voltage (CV) measurements of PbS nanosheets resulted in a stable butterfly loop due to switching of ferroelectric polarization at 300 K. The permittivity calculated at 0 V capacitance was ∼150 and the dielectric loss remained below ∼0.50. The polarization-voltage (QV) measurements showed a remnant polarization 23 μC cm-2in PbS nanosheets. The leakage current density was below 0.5 mA cm-2in the range ±5 V. © 2017 Vietnam Academy of Science & Technology.
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共 56 条
[1]  
Nguyen B.H., Nguyen V.H., Adv. Nat. Sci.: Nanosci. Nanotechnol., 7, 4, (2016)
[2]  
Mukherjee P., Patra S., Chakraborty G., Pradhan S., Meikap A., Adv. Nat. Sci.: Nanosci. Nanotechnol., 7, 3, (2016)
[3]  
Afsar M., Rafiq M., Tok A., RSC Adv., 7, (2017)
[4]  
Scanlon W.W., Phys. Rev., 109, (1958)
[5]  
Kundu T., Mukherjee M., Chakravorty D., Cross L., J. Appl. Phys., 83, (1998)
[6]  
Fleming P.J., Alberg M.J., J. Appl. Phys., 35, (1964)
[7]  
Spencer H., J. Appl. Phys., 31, (1960)
[8]  
Mahlman G., J. Appl. Phys., 37, (1966)
[9]  
Oman R., Priolo M.J., J. Appl. Phys., 37, (1966)
[10]  
Seltzer M.S., J. Appl. Phys., 37, (1966)
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