Synthesis and Characterization of Diamond Single Crystals with Fe3P-Doped Under High Pressure and High Temperature

被引：0

作者：

Guo, Zhenghao ^{[1
]}

Li, Shangsheng ^{[1
]}

Nie, Yuan ^{[1
]}

Hu, Qiang ^{[2
]}

Hu, Meihua ^{[1
]}

Chen, Jingjing ^{[1
]}

Xiao, Hongyu ^{[3
]}

Li, Yong ^{[3
]}

Li, Jianlin ^{[4
]}

Li, Li ^{[4
]}

Yu, Kunpeng ^{[4
]}

Guo, Mingming ^{[4
]}

Zhao, Chunhong ^{[4
]}

机构：

[1] Henan Polytech Univ, Sch Mat Sci & Engn, Jiaozuo 454000, Peoples R China

[2] Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R China

[3] Tongren Univ, Dept Phys & Elect Engn, Tongren 554300, Peoples R China

[4] Henan Famous Diamond Co Ltd, Mengzhou 454750, Peoples R China

来源：

NANO | 2025年

基金：

芬兰科学院;

关键词：

HPHT; doped diamond; n type semiconductor;

D O I：

10.1142/S1793292025500936

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Problems with the electrical characteristics of n-type semiconductor diamonds are difficult to overcome, which limits its application. Phosphorus doping is an important method for preparing n-type semiconductor diamonds. In this study, large single crystals of phosphorus-doped diamonds were synthesized along the (100) plane at 5.6GPa and 1235 degrees C using the temperature gradient method (TGM) by incorporating Fe3P into the FeNi catalyst. The crystal morphology showed that as the amount of Fe3P increased, the diamond crystal shape transitioned from octahedron to cub-octahedron. This transformation was attributed to the altered catalyst characteristics caused by Fe3P, which resulted in a shift of the V-shaped region in diamond synthesis to the upper right. Additionally, the presence of twinning in the synthesized diamond crystals suggested that the addition of Fe3P significantly disrupted normal crystal growth. The Fourier transform-infrared (FTIR) spectroscopy revealed that the nitrogen content (CN) of the crystals increased with the proportion of Fe3P raised, indicating that Fe3P facilitated the incorporation of nitrogen into the diamond crystals. The Raman spectra demonstrated that as the proportion of Fe3P increased, the diamond's Raman peak shifted to the left, indicating an increase in compressive stress in the diamonds. X-ray photoelectron spectroscopy (XPS) measurements confirmed the presence of phosphorus on the crystal surface. The results of the Hall effect measurement show that diamonds with Fe3P single-doping are n-type semiconductors. We believe this research contributes significantly to the advancement of n-type semiconductor diamonds.

引用

页数：11