Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

被引：21

作者：

Arora S. ^{[1
,2
]}

Jaimini V. ^{[1
]}

Srivastava S. ^{[2
]}

Vijay Y.K. ^{[2
]}

机构：

[1] Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur

[2] Vivekananda Global University, Jaipur

来源：

Journal of Nanotechnology | 2017年 / 2017卷

关键词：

Thermoelectricity - Bismuth compounds - Glass substrates - X ray diffraction - Nanostructures - Thin films - Thermal evaporation - Room temperature - Tellurium compounds;

D O I：

10.1155/2017/4276506

中图分类号：

学科分类号：

摘要：

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth. © 2017 Swati Arora et al.

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