Study of germanium sulfide thin films by doppler broadening spectroscopy

被引：0

作者：

Samadov, S. ^{[1
,2
,3
,4
]}

Sidorin, A. ^{[2
]}

Alekperov, A. ^{[5
,6
]}

Trung, N. V. M. ^{[2
,7
]}

Mammadov, T. G. ^{[8
]}

Dashdemirov, A. O. ^{[5
]}

Abiyev, A. S. ^{[2
,9
]}

Jabarov, S. H. ^{[8
]}

机构：

[1] Minist Sci & Educ Republ Azerbaijan, Inst Radiat Problems, AZ-1143 Baku, Azerbaijan

[2] Joint Inst Nucl Res, Dubna 141980, Russia

[3] Khazar Univ, AZ-1096 Baku, Azerbaijan

[4] Azerbaijan Architecture & Construct Univ, AZ-1073 Baku, Azerbaijan

[5] Azerbaijan State Pedag Univ, AZ-1000 Baku, Azerbaijan

[6] Baku Engn Univ, AZ-0101 Khirdalan, Azerbaijan

[7] Vietnam Acad Sci & Technol, Inst Phys, Hanoi 10000, Vietnam

[8] Minist Sci & Educ Republ Azerbaijan, Inst Phys, AZ-1143 Baku, Azerbaijan

[9] Western Caspian Univ, AZ-1001 Baku, Azerbaijan

来源：

INDIAN JOURNAL OF PHYSICS | 2025年

关键词：

Germanium monosulfide; Thin films; Positron Annihilation Spectroscopy; Doppler Broadening Spectroscopy; Structure defects; POSITRON-ANNIHILATION; GE;

D O I：

10.1007/s12648-025-03713-x

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The defect states of thin films of the GeS compound were investigated. Thin films with thicknesses of d = 250, 500, and 750 nm were obtained using the thermal evaporation method. The Doppler Broadening Spectroscopy (DBS) method was employed to study the defects. It was determined that the nature of the defects remains consistent regardless of the thickness of the thin films and that they are vacancy-type defects. Furthermore, it was identified that for thin films with a thickness of d = 500 nm, the S parameter reaches its maximum value, indicating the highest concentration of defects. This process corresponds to the completion of phase formation in GeS thin films with a thickness of d = 750 nm.

引用

页数：6

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