Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

被引：20

作者：

Huang, Y. ^{[1
]}

Aharon, S. ^{[2
]}

Rolland, A. ^{[1
]}

Pedesseau, L. ^{[1
]}

Durand, O. ^{[1
]}

Etgar, L. ^{[2
]}

Even, J. ^{[1
]}

机构：

[1] UMR FOTON CNRS 6082, INSA, Rennes,35708, France

[2] Institute of Chemistry, Casali Center for Applied Chemistry, Hebrew University of Jerusalem, Edmond J. Safra Campus, Givat Ram,91904 Jerusalem, Israel

来源：

EPJ Photovoltaics | 2017年 / 8卷

关键词：

Capacitance; -; Perovskite;

D O I：

10.1051/epjpv/2017001

中图分类号：

学科分类号：

摘要：

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs. © Y. Huang et al.

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