Radiation Effects and Low-Frequency Noise in AlGaN/GaN HEMTs

被引：0

作者：

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Zhang, En Xia ^{[1
]}

Pantelides, Sokrates T. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

2021 IEEE INTERNATIONAL MEETING FOR FUTURE ELECTRON DEVICES, KANSAI, IMFEDK | 2021年

关键词：

Radiation effects; HEMTs; gallium nitride; defects; hydrogen; 1/f noise; PROTON-INDUCED DEGRADATION; 1/F NOISE; DEFECTS; MOS; VOLTAGE; GAN; DEPENDENCE; HYDROGEN; STRESS; CHARGE;

D O I：

10.1109/IMFEDK53601.2021.9637542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview is presented of total-ionizing-dose (TID) and displacement damage (DD) effects on AlGaN/GaN HEMTs. Defect and impurity dehydrogenation dominates TID response. High-fluence proton-induced DD creates additional point defects and impurity complexes. Low-frequency noise measurements and density functional calculations provide insight into defect densities, microstructure, and energy levels.

引用

页数：6

共 54 条

[1] Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films [J].

Arehart, A. R. ;

Corrion, A. ;

Poblenz, C. ;

Speck, J. S. ;

Mishra, U. K. ;

DenBaars, S. P. ;

Ringel, S. A. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :1750-+

[2] Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors [J].

Balandin, A .

ELECTRONICS LETTERS, 2000, 36 (10) :912-913

[3] Space, atmospheric, and terrestrial radiation environments [J].

Barth, JL ;

Dyer, CS ;

Stassinopoulos, EG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) :466-482

[4] High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs [J].

Chen, Jin ;

Puzyrev, Yevgeniy S. ;

Zhang, En Xia ;

Fleetwood, Daniel M. ;

Schrimpf, Ronald D. ;

Arehart, Aaron R. ;

Ringel, Steven A. ;

Kaun, Stephen W. ;

Kyle, Erin C. H. ;

Speck, James S. ;

Saunier, P. ;

Lee, Cathy ;

Pantelides, Sokrates T. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (03) :282-289

[5] Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs [J].

Chen, Jin ;

Puzyrev, Yevgeniy S. ;

Jiang, Rong ;

Zhang, En Xia ;

McCurdy, Michael W. ;

Fleetwood, Daniel M. ;

Schrimpf, Ronald D. ;

Pantelides, Sokrates T. ;

Arehart, Aaron R. ;

Ringel, Steven A. ;

Saunier, Paul ;

Lee, Cathy .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) :2423-2430

[6] Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs [J].

Chen, Jin ;

Puzyrev, Yevgeniy S. ;

Zhang, Cher Xuan ;

Zhang, En Xia ;

McCurdy, Michael W. ;

Fleetwood, Daniel M. ;

Schrimpf, Ronald D. ;

Pantelides, Sokrates T. ;

Kaun, Stephen W. ;

Kyle, Erin C. H. ;

Speck, James S. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) :4080-4086

[7] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&

[8] LOW-FREQUENCY FLUCTUATIONS IN SOLIDS - 1-F NOISE [J].

DUTTA, P ;

HORN, PM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (03) :497-516

[9]

Fleetwood DM, 2016, 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), P45, DOI 10.1109/ICSICT.2016.7998835

[10] 1/f Noise and Defects in Microelectronic Materials and Devices [J].

Fleetwood, D. M. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (04) :1462-1486

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