Influence of substrate miscut on properties of GaN-based LED films grown on Si(111)

被引：0

作者：

Wu, Qin ^{[1
]}

Quan, Zhi-Jue ^{[1
]}

Wang, Li ^{[1
,2
]}

Liu, Wen ^{[1
]}

Zhang, Jian-Li ^{[1
]}

Jiang, Feng-Yi ^{[1
]}

机构：

[1] National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang

[2] Material Science and Engineering College, Nanchang University, Nanchang

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2015年 / 36卷 / 04期

关键词：

GaN; Miscut; MOCVD; Si substrate;

D O I：

10.3788/fgxb20153604.0466

中图分类号：

学科分类号：

摘要：

GaN-based LED films were grown on Si(111) substrate with different miscut angle from 0° to 0.9° by MOCVD. The miscut angles of Si(111) substrates were precisely measured by high resolution X-ray diffraction (HRXRD). The morphologies of the samples were characterized by atomic force microscopy (AFM). The GaN crystal quality and indium content of MQWs were analyzed by HRXRD. The optical properties of the samples were investigated by photoluminescence (PL). The results reveal that the miscut of Si(111) substrate has significant influence on the crystal quality, surface morphology and optical properties of GaN film. The optimal miscut angle of Si(111) substrate is within 0.5°. Beyond this range, the crystal quality, surface morphology and optical properties of GaN film will deteriorate drastically. ©, 2015, Chines Academy of Sciences. All right reserved.

引用

页码：466 / 471

页数：5

共 18 条

[1]

Xiong Y.J., Zhang M., Xiong C.B., Et al., Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si (111), Chin. J. Lumin., 31, 4, pp. 531-537, (2010)

[2]

Tao X.X., Wang L., Liu Y.S., Et al., Effects of the thickness of p-type GaN on light extraction of GaN based vertical light emitting diodes on silicon substrate, Chin. J. Lumin., 32, 10, pp. 1069-1073, (2011)

[3]

Liu W.H., Li Y.Q., Fang W.Q., Et al., The junction temperature characteristic of GaN light emitting diodes on Si substrate, Chin. J. Lumin., 27, 2, pp. 211-214, (2006)

[4]

Xiao Y.P., Mo C.L., Qiu C., Et al., The aging characteristics of GaN-based blue LED on Si substrate, Chin. J. Lumin., 31, 3, pp. 364-368, (2010)

[5]

Nakamura S., GaN growth using GaN buffer layer, Jpn. J. Appl. Phys., 30, 10 A, pp. 1705-1707, (1991)

[6]

Yamada H., Iso K., Saito M., Et al., Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes, Jpn. J. Appl. Phys., 46, 12 L, pp. 1117-1119, (2007)

[7]

Ishibashi A., Takeishi H., Uemura N., Et al., Metalorganic vapor phase epitaxy growth of a high-quality GaN/InGaN single quantum well structure using a misoriented SiC substrate, Jpn. J. Appl. Phys., 36, 3 S, pp. 1961-1965, (1997)

[8]

Shen X.Q., Matsuhata H., Okumura H., Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates, Appl. Phys. Lett., 86, 2, (2005)

[9]

Bae S.Y., Lee D.S., Kong B.H., Et al., Electroluminescence enhancement of semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates, Curr. Appl. Phys., 11, 3, pp. 954-958, (2011)

[10]

Wang L., Cui Z.Y., Huang F.S., Et al., Influence of miscut angle of Si (111) substrates on the performance of InGaN LEDs, Appl. Phys. Express, 7, 1, (2014)

← 1 2 →