High Linearity and Low Noise mm-Wave GaN HEMT RX Frontend

被引：0

作者：

Seo, Ji-Seung ^{[1
]}

Cho, Hyeon-Bhin ^{[1
]}

Chae, Soo-Chang ^{[1
]}

Kim, Jin-Sup ^{[1
]}

Kim, Ki-Jin ^{[1
]}

机构：

[1] Korea Elect Technol Inst KETI, ICT Device & Packaging Res Ctr, Seongnam, South Korea

来源：

2024 INTERNATIONAL SYMPOSIUM ON ANTENNAS AND PROPAGATION, ISAP | 2024年

关键词：

RX; Frontend; LNA; Traveling-wave; High Linearity; Low noise; Simultaneous matching; GaN;

D O I：

10.1109/ISAP62502.2024.10846688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Because the output power of the power amplifier is very high in the 5G system, switches with good isolation characteristics that can withstand high power and Low Noise Amplifiers that can withstand high power are essential for the stability of the communication system. In this paper, a switch with high isolation characteristics, low insertion loss characteristics, and a Low Noise Amplifier with high linearity and low noise figure were designed and verified. The verified switch has an isolation characteristic of -32 dBm and an insertion loss of 1.28 dB. The verified LNA has a noise figure of 1.8 dB and an OP1dB of 16.7 dBm. By combining these, the RX Frontend is designed with reinforced stability. The size of the proposed single chip is 3,470x1,570 um(2), and the gain is 23.5 dB, the noise figure is 2.7 dB, and the OP1dB is 19.8 dBm.

引用

页数：2

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Gasmi A, 2017, COMP SEMICOND INTEGR

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