A Broadband Model of Stacking TSV Channels for Nondestructive Defect Localization in 3D ICs and Microsystem

The defect localization is a key link and bottleneck for the failure analysis of 3D interconnects. This paper proposes a combined-cylindrical-shape defect model for the nondestructive defects testing and fault localization of TSV channels in 3D stacked dies. The TSV equivalent circuits and defective fault equivalent circuit are established to explain the fault principle. A simple scheme of GSG TSV channels is made, and their simulated results are shown with the frequency from 100MHz to 20GHz. By fitting the S-parameters of defect TSV chain, the open-circuit defect size and the defect module localization are estimated based on signal integration. The scalable defect localization method is used for multiple stacked dies scheme based on silicon substate.