Effect of AlGaN Thickness Variation on the Analog Performance of a Normally-off AlGaN/GaN based Double Gate MOS-HEMT Device

This study investigates the influence of AlGaN layer thickness variations on the analog performance of a normally off AlGaN/GaN based double gate MOS-HEMT device. The analog metrics considered encompass the transconductance generation factor (TGF), transconductance (g(m)), output resistance (r(0)), the conduction band energy diagram and drain current (I-d) with respect to the gate voltage (V-gs) and drain voltage (V-ds). A meticulous analysis of the analog performance underscores that the electrical properties of the device are profoundly affected by the AlGaN layer thickness. A device with an AlGaN thickness of 20 nm demonstrates a substantial 48.96% increase in ON current when juxtaposed with devices possessing greater thicknesses. Furthermore, a thinner AlGaN layer yields an 83.56% enhancement in peak transconductance.