Doping modification of YVO4:Eu3+ down-conversion materials for solar cell applications

被引：0

作者：

Tan M.-L. ^{[1
]}

Shang X.-R. ^{[1
,2
]}

Wang X.-W. ^{[1
]}

Li D.-S. ^{[1
]}

Fu D.-J. ^{[1
]}

Zhang W.-L. ^{[1
]}

Ma Q. ^{[1
]}

Chen J.-J. ^{[1
]}

Zhang H.-Y. ^{[2
]}

机构：

[1] Research Institute of Tsinghua University in Shenzhen, Shenzhen

[2] Harbin Institute of Technology Shenzhen Graduate School, Shenzhen

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2016年 / 37卷 / 08期

关键词：

Doping modification; Down-conversion; Yttrium vanadate;

D O I：

10.3788/fgxb20163708.0912

中图分类号：

学科分类号：

摘要：

Bismuth (Bi3+) and phosphorus (P3+) ions doped YVO4:Eu3+ down-conversion materials were prepared by modified sol-gel method to broaden the absorption range of ultraviolet light and enhance the stability of light emission. It is shown that some positions of Yttrium (Y3+) and Vanadium (V5+) ions can be successfully replaced by incorporated Bismuth (Bi3+) and phosphorus (P3+) ions in the YVO4 lattice. As to low Bi3+ doping, the crystal structure is still tetragonal and the position of Y3+ is well substituted by Bi3+. While for low P3+ doping, a homogeneous solid solution is formed between YVO4 and YPO4.Under the excitation of 325 nm, the highest luminescence intensity can be obtained with Bi3+ mole fraction of 0.04 and P5+ mole fraction of 0.10, respectively. In that case, the instensity of YV0.90P0.10O4:0.05Eu3+ can increase up to 1.9 times comparing to YVO4:0.05Eu3+. © 2016, Science Press. All right reserved.

引用

页码：912 / 918

页数：6