A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

被引：96

作者：

Mainali, Krishna ^{[1
]}

Tripathi, Awneesh ^{[1
]}

Madhusoodhanan, Sachin ^{[1
]}

Kadavelugu, Arun ^{[2
]}

Patel, Dhaval ^{[1
]}

Hazra, Samir ^{[1
]}

Hatua, Kamalesh ^{[3
]}

Bhattacharya, Subhashish ^{[1
]}

机构：

[1] Future Renewable Electrical Energy Delivery, North Carolina State University, Raleigh, 27695, NC

[2] ABB Corporate Research, North Carolina State University, Raleigh, 27695, NC

[3] Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai

来源：

IEEE Power Electronics Magazine | 2015年 / 2卷 / 03期

关键词：

Insulated gate bipolar transistors; Logic gates; MOSFET; Power harmonic filters; Silicon; Silicon carbide;

D O I：

10.1109/MPEL.2015.2449271

中图分类号：

学科分类号：

摘要：

The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems. © 2014 IEEE.

引用

页码：31 / 43

页数：12

共 31 条

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