A 28-GHz-Band Efficient Linear Power Amplifier With Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI

被引：1

作者：

Fang, Mengchu ^{[1
]}

Sugiura, Tsuyoshi ^{[2
]}

Yoshimasu, Toshihiko ^{[1
,2
]}

机构：

[1] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka, Japan

[2] Waseda Univ, Grad Sch Fundamental Sci & Engn, Shinjyuku Ku, Tokyo, Japan

来源：

2020 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS | 2020年

关键词：

power amplifier; high efficiency; high linearity; adaptive bias; CMOS SOI;

D O I：

10.1109/IWS49314.2020.9360109

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.

引用

页数：3