Reliability Enhanced Digital Low-Dropout Regulator with Improved Transient Performance

被引:0
作者
Wang, Longfei [1 ]
Seckiner, Soner [1 ]
Kose, Selcuk [1 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
来源
VLSI-SOC: NEW TECHNOLOGY ENABLER, VLSI-SOC 2019 | 2020年 / 586卷
关键词
NBTI; Reliability; Aging; Steady state performance; Transient performance; Shift register; Unidirectional control; VOLTAGE; EFFICIENT; LDO; DEGRADATION; CONVERTER; STABILITY; RECOVERY; SCHEME;
D O I
10.1007/978-3-030-53273-4_9
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Digital low-dropout voltage regulators (DLDOs) have drawn increasing attention for the easy implementation within nanoscale devices. Despite their various benefits over analog LDOs, disadvantages may arise in the form of bias temperature instability (BTI) induced performance degradation. In this Chapter, conventional DLDO operation and BTI effects are explained. Reliability enhanced DLDO topologies with performance improvement for both steady-state and transient operations are discussed. DLDOs with adaptive gain scaling (AGS) technique, where the number of power transistors that are turned on/off per clock cycle changes dynamically according to load current conditions, have not been explored in view of reliability concerns. As the benefits of AGS technique can be promising regarding DLDO transient performance improvement, a simple and effective reliability aware AGS technique with a steady-state capture feature is proposed in this work. AGS senses the steady-state output of a DLDO and reduces the gain to the minimum value to obtain a stable output voltage. Moreover, a novel unidirectional barrel shifter is proposed to reduce the aging effect of the DLDO. This unidirectional barrel shifter evenly distributes the load among DLDO output stages to obtain a longer lifetime. The benefits of the proposed techniques are explored and highlighted through extensive simulations. The proposed techniques also have negligible power and area overhead. NBTI-aware design with AGS can reduce the transient response time by 59.5% as compared to aging unaware conventional DLDO and mitigate the aging effect by up to 33%.
引用
收藏
页码:187 / 208
页数:22
相关论文
共 68 条
[1]   Integral Impact of BTI, PVT Variation, and Workload on SRAM Sense Amplifier [J].
Agbo, Innocent ;
Taouil, Mottaqiallah ;
Kraak, Daniel ;
Hamdioui, Said ;
Kukner, Halil ;
Weckx, Pieter ;
Raghavan, Praveen ;
Catthoor, Francky .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2017, 25 (04) :1444-1454
[2]   A Multiphase Buck Converter With a Rotating Phase-Shedding Scheme For Efficient Light-Load Control [J].
Ahn, Youngkook ;
Jeon, Inho ;
Roh, Jeongjin .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (11) :2673-2683
[3]   A comprehensive model of PMOS NBTI degradation [J].
Alam, MA ;
Mahapatra, S .
MICROELECTRONICS RELIABILITY, 2005, 45 (01) :71-81
[4]  
Bernardo DD, 2017, TENCON IEEE REGION, P505, DOI 10.1109/TENCON.2017.8227916
[5]   All-Digital Low-Dropout Regulator With Adaptive Control and Reduced Dynamic Stability for Digital Load Circuits [J].
Bin Nasir, Saad ;
Gangopadhyay, Samantak ;
Raychowdhury, Arijit .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (12) :8293-8302
[6]  
Bin Nasir S, 2015, APPL POWER ELECT CO, P371, DOI 10.1109/APEC.2015.7104377
[7]   Cyclic Power-Gating as an Alternative to Voltage and Frequency Scaling [J].
Cakmakci, Yaman ;
Toms, Will ;
Navaridas, Javier ;
Lujan, Mikel .
IEEE COMPUTER ARCHITECTURE LETTERS, 2016, 15 (02) :77-80
[8]  
Chan TB, 2011, DES AUT TEST EUROPE, P932
[9]  
Chang KS, 2017, 2017 IEEE ASIA PACIFIC CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIMEASIA), P57, DOI 10.1109/PRIMEASIA.2017.8280363
[10]   A 100-mA, 99.11% Current Efficiency, 2-mVpp Ripple Digitally Controlled LDO With Active Ripple Suppression [J].
Cheah, Michael ;
Mandal, Debashis ;
Bakkaloglu, Bertan ;
Kiaei, Sayfe .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2017, 25 (02) :696-704