Simulation Validation and Performance Optimization of Tandem Perovskite/Silicon Solar Cells Based on Experimental Single-Junction Perovskite Solar Cell

Tandem solar cells have emerged as a promising avenue for achieving higher efficiencies in photovoltaic technologies by combining materials with complementary optical and electrical properties. In this study, we investigate a two-step approach involving the simulation of both a perovskite-based single-junction solar cell and a tandem structure incorporating silicon layers, using Silvaco TCAD tools. Initially, a single-junction perovskite solar cell with the configuration FTO/TO2/MAPbl3/HTM was simulated. The simulation results showed a short-circuit current density Jsc of 20.057 mA/cm2, an open-circuit voltage Voc of 1.15 V, a fill factor (FF) of 50.03%, and a power conversion efficiency (PCE) of 12.68%. These values were compared with experimental data obtained from an external laboratory Jsc = 20.63 mA/cm2, Voc = 0.96 V, FF = 66.41%, and PCE = 13.15%), highlighting the alignment and deviations between the simulation and physical measurements. To enhance the performance, a tandem structure was developed by incorporating a 3-nm FTO layer as an intermediate contact beneath the HTM layer, followed by a three-layer silicon subcell consisting of donor (n-type), intrinsic, and acceptor (p-type) layers, resulting in significantly improved parameters, with Jsc reaching 36.5 mA/cm2, Voc of 1.05 V, FF of 73.18%, and a PCE of 28.03%. Additional studies were conducted to evaluate the effect of varying the thickness of the intrinsic silicon layer on the device performance and to analyze the temperature-dependent behavior of the tandem structure, providing insights into its stability and operational adaptability. This work underscores the potential of tandem architectures, particularly perovskite-silicon combinations, in advancing photovoltaic efficiency.