SiC Trench MOSFET Merged Schottky Barrier Diode for Enhanced Reverse Recovery Performance

被引：0

作者：

Kong, Moufu ^{[1
]}

Wang, Bin ^{[1
]}

Wu, Huanjie ^{[1
]}

Guo, Jiaxin ^{[1
]}

Huang, Ke ^{[1
]}

Zhang, Bingke ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China

来源：

9TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS, ISNE 2021 | 2021年

基金：

美国国家科学基金会;

关键词：

SiC MOSFET; Schottky barrier diode (SBD); super-junction; reverse recovery;

D O I：

10.1109/ISNE48910.2021.9493624

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

As a wide-bandgap semiconductor material, silicon carbide (SiC) is beginning to be widely used in high voltage power devices because of its superior electrical properties. Among SiC-based power devices, the SiC MOSFET is a popularly studied device due to its low drive power consumption, fast switching speed and low conduction loss. However, as for the conventional MOSFET, the high on-state voltage drop and bipolar degradation effect of the body PN junction diode result in a poor reverse recovery performance. And SiC MOSFETs with integrated Schottky barrier diodes have obvious advantages over the conventional SiC MOSFETs, which do not require off-chip anti-parallel fast recovery diodes in applications. In this paper, a new SiC trench MOSFET is proposed, which a Schottky barrier diode is integrated to enhance the reverse recovery performance.

引用

页数：4

共 13 条

[1] A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase [J].

Abi-Tannous, Tony ;

Soueidan, Maher ;

Ferro, Gabriel ;

Lazar, Mihai ;

Raynaud, Christophe ;

Toury, Berangere ;

Beaufort, Marie-France ;

Barbot, Jean-Francois ;

Dezellus, Olivier ;

Planson, Dominique .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (06) :2462-2468

[2]

Acquaviva A, 2017, EUR CONF POW ELECTR

[3]

Chen Z, 2017, 2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS), P148, DOI 10.1109/IFWS.2017.8245996

[4] Titanium and aluminum-titanium ohmic contacts to p-type SiC [J].

Crofton, J ;

Beyer, L ;

Williams, JR ;

Luckowski, ED ;

Mohney, SE ;

Delucca, JM .

SOLID-STATE ELECTRONICS, 1997, 41 (11) :1725-1729

[5] Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications [J].

Imaizumi, Masayuki ;

Miura, Naruhisa .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) :390-395

[6]

Jiang HP, 2016, INT SYM POW SEMICOND, P59, DOI 10.1109/ISPSD.2016.7520777

[7]

Kawahara Koutarou, 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P41, DOI 10.23919/ISPSD.2017.7988888

[8] Electrical characteristics of Ti/4H-SiC silicidation Schottky barrier diode [J].

Kinoshita, Akimasa ;

Nishi, Takashi ;

Ohyanagi, Takasumi ;

Yatsuo, Tsutomu ;

Fukuda, Kenji ;

Okumura, Hajime ;

Arai, Kazuo .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :643-+

[9]

Kobayashi Y, 2019, PROC INT SYMP POWER, P31, DOI [10.1109/ISPSD.2019.8757609, 10.1109/ispsd.2019.8757609]

[10] Evaluation of Schottky barrier height on 4H-SiC m-face {1(1)over-bar00} for Schottky barrier diode wall integrated trench MOSFET [J].

Kobayashi, Yusuke ;

Ishimori, Hiroshi ;

Kinoshita, Akimasa ;

Kojima, Takahito ;

Takei, Manabu ;

Kimura, Hiroshi ;

Harada, Shinsuke .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)

← 1 2 →