An S-band Wideband High power GaN HEMT Power Amplifier

被引：2

作者：

Li, Fei ^{[1
]}

Zhong, Shi-Chang ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Nanjing, Peoples R China

来源：

2020 CROSS STRAIT RADIO SCIENCE & WIRELESS TECHNOLOGY CONFERENCE, CSRSWTC | 2020年

关键词：

GaN HEMT; High power amplifiers; Wideband amplifiers; S-band;

D O I：

10.1109/CSRSWTC50769.2020.9372600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An S-band wideband high power GaN-based power amplifier is presented in this work. The designed amplifier size is 11mm x 20mm, the interconnection between discrete transistor and matching networks is achieved by gold bonding wires. The internally matched power amplifier has presented the pulse output power of over 350 W over 2.7-3.6 GHz frequency band. Experimental results show that the power amplifier with drain voltage of 48 V, can be achieved more than 60% power added efficiency and 350W output power under the pulse-width 300 us and 10% duty-cycle.

引用

页数：2