Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

被引：0
作者：
Usami, T. [1 ]
Kubo, Y. [2 ]
Suzuki, K. [3 ]
Mizukami, S. [4 ,5 ]
Hamaya, K. [1 ,2 ]
机构：
[1] Univ Osaka, Inst Open & Transdisciplinary Res Initiat, Spintron Res Network Div, Suita, Osaka 5650871, Japan
[2] Univ Osaka, Ctr Spintron Res Network, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[3] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
[5] Tohoku Univ, Ctr Sci & Innovat Spintron, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2025年 / 127卷 / 03期
基金：
日本科学技术振兴机构;
关键词：
ROOM-TEMPERATURE; ELECTRIC-FIELD; ANISOTROPY; VOLTAGE; SPIN; MANIPULATION;
D O I：
10.1063/5.0274897
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electric field (E) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore E control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied E to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain E. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.
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页数：5
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