Review on reliability of electronic devices in deep space environment

被引：0

作者：

Guan, Qilong ^{[1
]}

Hang, Chunjin ^{[1
,2
]}

Li, Shengli ^{[1
]}

Tang, Xiaojiu ^{[1
]}

Yu, Dan ^{[3
]}

Ding, Ying ^{[3
]}

机构：

[1] State Key Laboratory of Precision Wetding, Joining of Materials and Structures, Harbin Institute of Technology, Harbin,150001, China

[2] Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou,450000, China

[3] Beijing Institute of Control Engineering, Beijing,100094, China

来源：

Xi Tong Gong Cheng Yu Dian Zi Ji Shu/Systems Engineering and Electronics | 2025年 / 47卷 / 04期

关键词：

Computer hardware - Computer workstations - Facsimile equipment - Optical communication equipment - Radio equipment - Semiconducting silicon - Telephone apparatus - Telephone equipment - Television equipment;

D O I：

10.12305/j.issn.1001-506X.2025.04.15

中图分类号：

学科分类号：

摘要：

Deep space environments (cryogenic environment, high temperature and intense radiation, etc.) seriously affect the Performance and reliability of spaceborne electronics, which impact the safe Operation of deep space exploration spacecrafts. SiGe is mostly appropriate for low temperature and intense radiation application. SiC and GaN are great candidates for all the extreme environments. The reliability of packaging materials Service in extremely high temperature environments has become a huge challenge to the further development of the spaceborne semiconductor devices. This paper summarizes domestic and international researches on the reliability of Si, SOI, SiGe, GaN, and SiC devices and device packaging materials under the harsh environments. The Service environments and usage recommendations of the above semiconductor devices and packaging materials are summarized. © 2025 Chinese Institute of Electronics. All rights reserved.

引用

页码：1184 / 1194