Microstructure and optoelectrical characteristics of silicon suboxide film and its application in silicon thin film solar cell

被引：0

作者：

Fang X. ^{[1
,2
]}

Wang W. ^{[1
]}

Duan J. ^{[1
]}

Li H. ^{[1
]}

Huang J. ^{[1
]}

Gao C. ^{[2
]}

Song W. ^{[1
]}

机构：

[1] Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo

[2] Nano Science and Technology Institute, University of Science and Technology of China, Suzhou

来源：

Zhongguo Kexue Jishu Kexue/Scientia Sinica Technologica | 2016年 / 46卷 / 03期

关键词：

Absorber layer; High bandgap; Reflector; Silicon suboxide film; Solar cell; Window layer;

D O I：

10.1360/N092015-00222

中图分类号：

学科分类号：

摘要：

Silicon film alloying can adjust the bandgap and reflective index of silicon film, thus it is an important material for improving solar cell performance. Mixed-phase silicon suboxide film, with the properties of high conductivity, high bandgap, and low refractive index, has been widely used as the intrinsic and doped layers in p-i-n silicon thin film solar cell. In this paper, we review the microstructure, optical and electrical characteristics of silicon suboxide films, and also its role as the window layer, absorber layer, intermediate reflector, and back reflector in silicon thin film solar cell. © 2016, Science Press. All right reserved.

引用

页码：213 / 224

页数：11

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