Progress in piezo-phototronic effect enhanced photodetectors

被引：51
作者：
Han X. [1 ]
Chen M. [1 ]
Pan C. [1 ]
Wang Z.L. [1 ,2 ]
机构：
[1] Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing
[2] School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, 30332-0245, GA
来源：
Journal of Materials Chemistry C | 2016年 / 4卷 / 48期
基金：
中国国家自然科学基金;
关键词：
III-V semiconductors - Magnetic semiconductors - Wide band gap semiconductors - Photons - Semiconducting zinc compounds - Photodetectors - Semiconducting selenium compounds - Cadmium compounds - II-VI semiconductors - Zinc oxide - Band diagram - Semiconducting indium compounds - Zinc sulfide;
D O I：
10.1039/c6tc04029b
中图分类号：
学科分类号：
摘要：
Wurtzite structured materials such as InN, CaN, ZnO, and CdSe simultaneously possess piezoelectric, semiconducting, and photoexcitation properties. The piezo-phototronic effect utilizes the piezo-polarization charges induced in the vicinity of the interface/junction to regulate the energy band diagrams and modulate charge carriers in the optoelectronic processes, such as transport, generation, recombination, and separation. This article reviews recent progress in piezo-phototronic effect enhanced photodetectors, starting from the fundamental physics, following the development from a single nanowire device to a large-scale photodetector array for illumination imaging. The piezo-phototronic effect provides a promising approach to improve the performance of the wurtzite structured material-based photodetectors. It may have potential applications in optical communication, optoelectronic devices, and multifunctional computing systems. © The Royal Society of Chemistry.
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页码：11341 / 11354
页数：13
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