Reduced phonon lifetime driven low lattice thermal conductivity in Se substituted WS2 for thermoelectric applications

被引:0
作者
Murugadass, T. [1 ,2 ]
Vijay, V. [3 ]
Archana, J. [1 ]
Navaneethan, M. [3 ]
Nisha, K. D. [1 ]
机构
[1] SRM Inst Sci & Technol, Fac Engn & Technol, Ctr Excellence Mat & Adv Technol CeMAT, Kattankulathur 603203, India
[2] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Kattankulathur 603203, India
[3] SRM Inst Sci & Technol, Fac Engn & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, India
关键词
Phonon lifetime; Isovalent substitution; Strain field; Mass fluctuation; WS2-xSex; TMDCs; TUNGSTEN DISULFIDE; TRANSPORT-PROPERTIES; BAND-STRUCTURE; PERFORMANCE; ENHANCEMENT; CONVERGENCE; SCATTERING; BULK;
D O I
10.1016/j.surfin.2025.106905
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, Se substitution in WSJ significantly influences its structural, vibrational, electrical, and thermal properties, ultimately enhancing its thermoelectric performance. The isovalent Se substitution induces lattice strain and creates a strain field, along with defects like dislocations and stacking faults, which significantly reduces phonon lifetimes (t), resulting in reduced thermal conductivity by 27 % compared to pristine WS2. The 5 % Se-substituted sample exhibits an enhanced Seebeck coefficient of 545 mu V/K at 753 K, despite a slight reduction in electrical conductivity was obtained. This balance between reduced thermal conductivity and improved Seebeck coefficient leads to a 55 % increase in thermoelectric performance compared to pristine WS2. The isovalent substitution effectively decouples thermal and electrical conductivities, optimizing phonon scattering without significantly affecting charge carrier mobility. Consequently, a maximum zT of 0.03 at 753 K is achieved in the 5 % Se-substituted WS2, positioning it as a promising material for thermoelectric applications.
引用
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页数:12
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