Characterization of the In-plane Thermal Conductivity of Sub-10 nm Ir Films on a Flexible Substrate

被引:0
作者
Alahmad, Qusai [1 ]
Lin, Huan [2 ]
Liu, Jing [3 ]
Rahbar, Mahya [1 ]
Kingston, Todd A. [1 ]
Wang, Xinwei [1 ]
机构
[1] Iowa State Univ, Dept Mech Engn, 271 Appl Sci Complex 2, Ames, IA 50011 USA
[2] Qingdao Univ Technol, Sch Environm & Municipal Engn, Qingdao 266033, Shandong, Peoples R China
[3] Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Guangdong, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Differential TET; Electrical conductivity; Lorenz number; Thermal conductivity; Ultra-thin Iridium film; WIEDEMANN-FRANZ LAW; ELECTRICAL-CONDUCTION; THIN; TEMPERATURE; TRANSPORT; RESISTIVITY; GRAPHENE;
D O I
10.1007/s10765-025-03606-5
中图分类号
O414.1 [热力学];
学科分类号
摘要
The in-plane thermal conductivity (k) of ultrathin films is of great scientific and engineering importance as the ultrafine thickness will cause remarkable energy carrier scattering. However, the in-plane k is extremely difficult to measure as the in-plane heat conduction is highly overshadowed by the substrate. To date, very rare experimental data and understanding have been reported. Here we report an advanced differential transient electro-thermal (TET) technique to characterize the in-plane k of supported nm-thin Iridium films down to < 2 nm thickness. The ultrathin (500 nm) organic substrate and its low k makes it possible to distinguish the in-plane k of the film with high confidence. The radiation effect is rigorously treated and subtracted from the measured k. Also measurements under different temperature rise levels allow us to determine the k at the zero temperature rise limit. All these physics treatments lead to high accuracy determination of the in-plane k, and understanding of the strong structural effects. The k of ultrathin Ir films supported on polyethylene terephthalate is determined to be 11.7 W<middle dot>m(-1)<middle dot>K-1, 20.1 W<middle dot>m(-1)<middle dot>K-1, 23.5 W<middle dot>m(-1)<middle dot>K-1, and 34.3 W<middle dot>m(-1)<middle dot>K-1 for thicknesses of 1.83 nm, 3.11 nm, 5.86 nm, and 9.16 nm, respectively. This is more than one order of magnitude reduction from the bulk's k of 147 W<middle dot>m(-1)<middle dot>K-1. The film's electrical conductivity is found to have more than two orders of magnitude reduction from that of bulk Ir (1.96 x 10(7) Omega(-1)<middle dot>m(-1)). The Lorenz number of the studied Ir films increases significantly with decreased film thickness, and is upto 14-fold higher (3.97 x 10(-7) W<middle dot>Omega<middle dot>K-2) than that of bulk Ir (2.54 x 10(-8) W<middle dot>Omega<middle dot>K-2). It underscores the significant and deviated influence of structure and film dimension on heat and electrical conductions and provides invaluable knowledge for future applications in nanoelectronics.
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页数:21
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