Classifications of Dislocations in 4H-SiC Wafer by Confocal Laser Scanning Microscopy

被引：0

作者：

Chole, Nilesh ^{[1
,2
]}

Patel, Ankit ^{[1
]}

Mittal, Mani ^{[1
]}

Saho, Praveen ^{[1
]}

Asthania, Meenakshi ^{[1
]}

Marandi, Vivek ^{[1
]}

Kumar, Alok ^{[1
]}

Das, Biswanath ^{[1
]}

Rawal, D. S. ^{[1
]}

Bokolia, Renuka ^{[2
]}

Thakur, O. P. ^{[1
]}

机构：

[1] Solid State Phys Lab, New Delhi, India

[2] Delhi Technol Univ, Dept Appl Phys, New Delhi, India

来源：

INTEGRATED FERROELECTRICS | 2025年

关键词：

Silicon carbide; KOH etching; surface dislocations; semi insulating; confocal microscopy; SILICON;

D O I：

10.1080/10584587.2025.2482435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H polytype Silicon carbide sample was etched using molten KOH. Etch pits were carefully observed using Confocal Laser scanning microscope, which is one of the promising techniques for the identification of dislocations. Depth profiling and inclination angle of etch pits provide a new way to identify and classify various defects in the SiC sample.

引用

页数：8

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