A Large-Signal AlGaN/GaN HEMT model for Ku-band applications

被引：0
作者：
Mongia, Deepti [1 ]
Chander, Subhash [1 ]
机构：
[1] Solid State Phys Lab, Delhi, India
来源：
2024 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON | 2024年
关键词：
AlGaN/GaN HEMT; large-signal model; Ku-band; FET; CIRCUIT;
D O I：
10.1109/MAPCON61407.2024.10923419
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the method for extracting the large-signal model of a 0.15 mu m AlGaN/GaN HEMT device of size 6x75 mu m has been described. The extraction of small-signal parameters at different gate-drain voltages is based on getting reliable extrinsic parameter values from the measured passive pinch-off data, which are then optimized. The model coefficients for the drain source current model have been obtained using curve fitting of the measured I-V data. The model accuracy was verified by S-parameter matching, DC I-V matching and Pout vs. Pin matching between the model and the measured data. The saturated output power of 30.8 dBm has been obtained from the device model in Ku-band.
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页数：4
相关论文
共 17 条
[1]   A NEW EMPIRICAL NONLINEAR MODEL FOR HEMT AND MESFET DEVICES [J].
ANGELOV, I ;
ZIRATH, H ;
RORSMAN, N .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (12) :2258-2266
[2]   An empirical table-based FET model [J].
Angelov, I ;
Rorsman, N ;
Stenarson, J ;
Garcia, M ;
Zirath, H .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (12) :2350-2357
[3]  
Angelov I., 2007, WORKSH ADV ACT DEV C
[4]   HIGH-FREQUENCY EQUIVALENT-CIRCUIT OF GAAS-FETS FOR LARGE-SIGNAL APPLICATIONS [J].
BERROTH, M ;
BOSCH, R .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (02) :224-229
[5]  
Costa J. C., 1992, 1992 IEEE MTT-S International Microwave Symposium Digest (Cat. No.92CH3141-9), P1011, DOI 10.1109/MWSYM.1992.188162
[6]   A NONLINEAR GAAS-FET MODEL FOR USE IN THE DESIGN OF OUTPUT CIRCUITS FOR POWER-AMPLIFIERS [J].
CURTICE, WR ;
ETTENBERG, M .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) :1383-1394
[7]   A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].
DAMBRINE, G ;
CAPPY, A ;
HELIODORE, F ;
PLAYEZ, E .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159
[8]   GaN HEMT based Ku-band Power Amplifier MMIC [J].
Imran, Mohd. ;
Gupta, Parul ;
Reeta ;
Mishra, Meena .
2022 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON, 2022, :792-795
[9]   Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design [J].
Khandelwal, Sourabh ;
Yadav, Chandan ;
Agnihotri, Shantanu ;
Chauhan, Yogesh Singh ;
Curutchet, Arnaud ;
Zimmer, Thomas ;
De Jaeger, Jean-Claude ;
Defrance, Nicolas ;
Fjeldly, Tor A. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3216-3222
[10]  
Lin Fujiang, 1988, IEEE Transactions on MTT, V36
12