Microstructure and electrical characteristics of Ce doped ZnO thin films

被引：0
作者：
He, Kai [1 ]
Wu, Wenhao [1 ]
Chen, Buhua [2 ]
Wu, Jieting [1 ]
Xu, Chuanmeng [1 ]
Xu, Dong [1 ,3 ]
机构：
[1] School of Material Science and Engineering, Jiangsu University, Zhenjiang
[2] Changzhou Ming Errui Ceramics Co. Ltd., Changzhou
[3] State Key Laboratory of Electronic Thin Films and Integrated Davices, University of Electronic Science and Technology of China, Chengdu
来源：
Gongneng Cailiao/Journal of Functional Materials | 2015年 / 46卷 / 18期
关键词：
Electric properties; Microstructure; Rare earth; Varistor; Zinc oxide;
D O I：
10.3969/j.issn.1001-9731.2015.18.014
中图分类号：
学科分类号：
摘要：
A kind of rare earth metal cerium doped ZnO-Bi2O3 varistor thin films were prepared by the sol-gel method. The XRD, AFM, dielectric properties and varistor characteristics were investigated. According the results, the crystal structure of ZnO-Bi2O3 varistor thin films couldn't be influenced by Ce doping, while the grain size were decresed. The leakage current and dielectric loss could be decreased by Ce doping, and the nonlinear characteristics could be improved. The threshold voltage of ZnO-Bi2O3 varistor thin film was increased to 175 V/mm and the leakage current was declined to 502 μA through 0.3mol% Ce doping. © 2015, Journal of Functional Materials. All right reserved.
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页码：18070 / 18073
页数：3
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