Local carrier concentration variations due to partial dislocations associated with stacking faults in 4H-SiC homoepitaxial layers

被引：0

作者：

Kitahara, Koki ^{[1
]}

Okano, Hirono ^{[1
]}

Senzaki, Junji ^{[2
]}

Ohtani, Noboru ^{[1
]}

机构：

[1] Kwansei Gakuin Univ, Sch Sci & Technol, 1 Gakuen Uegahara, Sanda, Hyogo 6691330, Japan

[2] Natl Inst Adv Ind Sci & Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2025年 / 138卷 / 01期

关键词：

SILICON-CARBIDE; TRIANGULAR DEFECTS; DEGRADATION;

D O I：

10.1063/5.0274898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

4H-SiC epitaxial layers grown on partial dislocations (PDs) associated with basal plane stacking faults (SFs) were investigated using micro-Raman scattering spectroscopy. It was found that the epitaxial layers grown on certain types of PD showed a local nitrogen doping variation along PD, where the nitrogen doping was enhanced on either side of PDs (perfect crystal or the SF side) and reduced on the other side. Furthermore, the variation pattern of nitrogen doping was inverted when the type of PD changed. Based on these results, the mechanism that the nitrogen doping variation occurred in the epitaxial layer grown on PDs is discussed.

引用

页数：10

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