High-Performance Detection of Toxic Gases Using a New Microsensor based on Graphene Field-Effect Transistor

In this paper, a new gas microsensor based on graphene field-effect transistor (GFET) is proposed, modeled, and studied through a compact drain current model. This latter is based on drift-diffusion carrier transport, which takes into account the sensing and transduction mechanisms and includes the dimensional and physical sensor parameters. The used sensing principle is based on the work function modulation technique. The shift in Dirac point voltage is considered as a sensing metric. The proposed GFET-based gas microsensor, that employs a top sensitive gate as reference and a back gate for control, has exhibited an ultra-sensitive performance toward the toxic gases. The obtained results make the suggested GFET-based gas microsensor as a promising candidate for high-performance and low-cost monitoring and defense applications.