An 88∼100 GHz High-Robustness Low-Noise Amplifier with 3.0∼3.5 dB Noise Figure Using 0.1μm GaN-on-SiC process

This paper demonstrates the designed process and experimental performance of a W-band low-noise amplifier (LNA) MMIC based on a 0.1 mu m gate length GaN-on-SiC process. A considerable available gain can be realized at low voltage in W-band. At the same time, the desired LNA takes into account enhanced output power, large power capacitance, high withstand voltage, anti-static electricity and improved reliability of GaN technology, which is more convenient to integrate with other GaN power amplifiers and switches. The LNA is composed of a 3-stage common-source amplifier constructed to operate over an 88 similar to 100 GHz frequency band. This measured amplifier achieves gain of 20-21dB, noise figure of 3.0-3.5dB, output power of 14.5dBm at 1dB compression point (P-1), power capacitance of 4 W, withstand voltage of 45 V and anti- static electricity of 2000 V. The MMIC is 3.1 x 1.5 mm(2) in size and consumes 0.4 W of dc power from a 5 V supply.