A W-band High-Gain Differential LNA Using Cross-Coupled Neutralization Capacitors in 65-nm CMOS

被引：0

作者：

Wang, Ji-xuan ^{[1
]}

Ni, Dong-xin ^{[1
]}

Ren, Zhao-xiang ^{[1
]}

Zhou, Liang ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai, Peoples R China

来源：

2024 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, RFIT | 2024年

关键词：

low-noise amplifier (LNA); W band; high gain; 65nm-CMOS; LOW-NOISE AMPLIFIER;

D O I：

10.1109/RFIT60557.2024.10812507

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents the design of a W-band low noise amplifier (LNA) fabricated in 65-nm CMOS. The LNA is composed of a four-stage differential common-source cascade structure and utilizes the cross-coupled neutralization capacitors to maximize the power gain. Measurement results shows that the proposed LNA exhibits a peak gain of 22 dB at 90 GHz with 10 GHz 3 dB bandwidth. The minimum noise figure of 8.4 dB is obtained at 94 GHz. The proposed LNA consumes a power of 56 mW with 1 V dc supply and the total chip area, including the pads, is 0.636 mm(2). It is designed to realize high-integration, high-reliability, and high-power RF front-end.

引用

页数：3

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