Damage Effects and Protection on Low-Noise Amplifiers Under High-Power Microwaves

被引:0
作者
Huang, Zekang [1 ]
Zhang, Yang [2 ]
Ge, Xingjun [2 ]
机构
[1] Natl Univ Def Technol, Elect Sci & Technol, Changsha 410073, Peoples R China
[2] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
基金
中国博士后科学基金;
关键词
Time-domain analysis; Protection; Integrated circuit modeling; MODFETs; Microwave theory and techniques; Fitting; Finite difference methods; Numerical models; Microwave amplifiers; Low-noise amplifiers; Damage mechanisms; electromagnetic protection; high-power microwaves (HPM); low-noise amplifiers (LNA); reliability in electromagnetic environments; ALGAN/GAN HEMTS; SUSCEPTIBILITY; INVERTERS; BREAKDOWN; BEHAVIOR; LIMITER; DEVICES; DIODE; HPEM;
D O I
10.1109/TEMC.2025.3560618
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article investigates the impact of high-power microwaves (HPM) on low-noise amplifiers (LNA) and protective measures. It begins by discussing the predominant types of LNA, followed by an examination of experimental methodologies and advancements in understanding HPM's effects on LNA. The article systematically organizes the phenomena related to HPM interference and damage, as well as explores the mechanisms underlying these effects. Specifically, it analyzes how parameters such as pulsewidth, repetition frequency, and carrier frequency influence the damage threshold. To address existing gaps in current research, potential directions for future investigation and development are proposed. Furthermore, recent advancements in protective strategies for LNA are discussed, including limiter technologies and transistor designs specifically engineered to mitigate HPM threats. This article aims to provide valuable insights for researchers and engineers striving to enhance the resilience of LNA in high-power environments.
引用
收藏
页码:842 / 853
页数:12
相关论文
共 86 条
[61]   Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs [J].
Yu, Xinhai ;
Chai, Changchun ;
Liu, Yang ;
Yang, Yintang ;
Fan, Qingyang .
MICROELECTRONICS RELIABILITY, 2015, 55 (08) :1174-1179
[62]  
Yuan Y., 2020, HIGH POWER LASER PAR, V32, P57
[63]  
Zhang C., 2017, THESIS NATL U DEFENS
[64]   Protection Effects Using Transient Voltage Suppressor Diodes Based Circuits Under High-Power Microwave Pulses [J].
Zhang, Cheng-rui ;
Zeng, Xun ;
Zhou, Liang ;
Mao, Jun-Fa .
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2021, 63 (06) :2058-2064
[65]   Nonlinear and Damage Properties of BJT Injected With Microwave Pulses [J].
Zhang, Cunbo ;
Wang, Honggang ;
Zhang, Jiande ;
Du, Guangxing .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2016, 44 (03) :239-244
[66]   Experiment and Simulation of the Nonlinear and Transient Responses of GaAs PHEMT Injected With Microwave Pulses [J].
Zhang, Cunbo ;
Wang, Honggang ;
Zhang, Jiande ;
Du, Guangxing .
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2015, 57 (05) :1132-1138
[67]   Burnout properties of microwave pulse injected on GaAs PHEMT [J].
Zhang, Cunbo ;
Zhang, Jiande ;
Wang, Honggang ;
Du, Guangxing .
MICROELECTRONICS RELIABILITY, 2015, 55 (3-4) :508-513
[68]   Failure Analysis on Damaged GaAs HEMT MMIC Caused by Microwave Pulse [J].
Zhang, Cunbo ;
Wang, Honggang ;
Zhang, Jiande ;
Du, Guangxing ;
Yang, Jie .
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2014, 56 (06) :1545-1549
[69]  
Zhang Haiwei, 2011, High Power Laser and Particle Beams, V23, P3029, DOI 10.3788/HPLPB20112311.3029
[70]  
Zhang Jingqi, 2022, 2022 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC), P349, DOI 10.1109/APEMC53576.2022.9888719