Graded index Silicon Germanium photonics circuits in the mid-infrared

被引:0
作者
Marris-Morin, Delphine [1 ]
Thi Hao Nhi Nguyen [1 ]
Turpaud, Victor [1 ]
Bricout, Annabelle [1 ]
Remis, Hamza Dely Andres [1 ]
Frigerio, Jacopo [2 ]
Calcaterra, Stefano [2 ]
Impelluso, Davide [2 ]
Hartmann, Jean Michel [3 ]
Krawczyk, Julia [3 ]
Lima, Gabriel [3 ]
Coudevylle, Jean-Rene [1 ]
Bouville, David [1 ]
Edmond, Samson [1 ]
Herth, Etienne [1 ]
El Bouchikhi, Nooman [1 ]
Pedroche, Javier Huertas [1 ]
Alonso-Ramos, Carlos [1 ]
Vivien, Laurent [1 ]
Isella, Giovanni [2 ]
机构
[1] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France
[2] Politecn Milan, Polo Como, L NESS, Dipartimento Fis, Via Anzani 42, I-22100 Como, Italy
[3] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
来源
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XXIX | 2025年 / 13369卷
关键词
silicon photonics; mid-infrared; resonators; modulators;
D O I
10.1117/12.3041154
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A photonics platform based on graded SiGe waveguides has been developed for operating in the mid-IR range, with experimental demonstrations up to 11 mu m wavelength. Applications are related with absorption spectroscopy and sensing in the fingerprint region, and with free space communications. After an overview of the platform, the presentation will focus on : (i) integrated high speed modulators operating in a wide spectral range, based on free carrier plasma dispersion effect, (ii) integrated resonators operating around 8 mu m wavelength with quality factors beyond 10(5). We will also show that mid-IR graded SiGe photonics circuits can be fabricated on industrial-scale 200 mm wafers, and that low propagation losses can be obtained in a wide spectral range of the mid-IR. These results thus pave the way for a scalable silicon compatible mid-infrared platform.
引用
收藏
页数:6
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