Low-Noise Amplifiers in Gallium Nitride for Robust and Highly Linear Ka-Band SATCOM

被引：0

作者：

Longhi, Patrick Ettore ^{[1
]}

Pace, Lorenzo ^{[1
]}

Ciccognani, Walter ^{[1
]}

Colangeli, Sergio ^{[1
]}

Limiti, Ernesto ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, EE Dept, I-0013 Rome, Italy

来源：

PROCEEDINGS OF SIE 2022 | 2023年 / 1005卷

关键词：

Gallium nitride; Low-noise amplifier; Ka-band; Third order intercept point; High linearity; LNA;

D O I：

10.1007/978-3-031-26066-7_13

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, within the framework of a project funded by the European Space Agency, two concept demonstrators in OMMIC's industrial-grade GaN HEMTtechnology on a Silicon substrate have been developed. The first test vehicle is an ultra Low-Noise Amplifier (LNA), realized in OMMIC's 60-nm GaN HEMT technology, demonstrating state-of-the-art 1.2 dB Noise Figure, in the 26-32 GHz bandwidth. The second test vehicle is a Medium Level Amplifier (MLA), realized in OMMIC's 100-nm GaN HEMT technology, providing +31 dBm Output Third Order Intercept point (OTOI). Both performances compare very well with recently published material.

引用

页码：81 / 87

页数：7

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