Surface Plasmon Polariton Photoluminescence Enhancement of Single InP Nanowires with InAsP Quantum Wells

被引：1

作者：

Shugabaev, Talgat ^{[1
,2
]}

Gridchin, Vladislav O. ^{[1
,2
,3
]}

Melnichenko, Ivan A. ^{[2
,4
]}

Bulkin, Pavel ^{[5
]}

Abramov, Artem N. ^{[6
]}

Kuznetsov, Alexey ^{[7
]}

Maksimova, Alina A. ^{[2
,8
]}

Novikov, Ivan A. ^{[8
]}

Khrebtov, Artem I. ^{[2
]}

Ubyivovk, Yevgeniy V. ^{[1
]}

Kotlyar, Konstantin P. ^{[1
,2
]}

Kryzhanovskaya, Natalia V. ^{[4
]}

Reznik, Rodion R. ^{[1
]}

Cirlin, George E. ^{[1
,2
,3
,6
]}

机构：

[1] St Petersburg State Univ, Fac Phys, St Petersburg 199034, Russia

[2] Alferov Univ, St Petersburg 194021, Russia

[3] RAS, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[4] HSE Univ, St Petersburg 194100, Russia

[5] IP Paris, Ecole Polytech, F-91128 Palaiseau, France

[6] ITMO Univ, St Petersburg 197101, Russia

[7] Moscow Ctr Adv Studies, Moscow 123592, Russia

[8] ETU LETI, St Petersburg 197022, Russia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2025年 / 19卷 / 04期

基金：

俄罗斯科学基金会;

关键词：

InAsP; InP; molecular beam epitaxy; nanowires; photoluminescence enhancement; surface plasmon polaritons; GAAS;

D O I：

10.1002/pssr.202400296

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A significant (up to 4 times) photoluminescence enhancement of single InP/InAsP/InP nanowires transferred onto a silicon oxide-covered silver layer on silicon substrate with a metal surface roughness level of less than 1 nm and a dielectric thickness of 5 nm has been demonstrated. This phenomenon is explained by the interaction of electron-hole pairs in the semiconductor with surface plasmon polaritons. The photoluminescence kinetics and results of modeling confirm the indicated enhancement mechanism.

引用

页数：6