Potential for radiation detector based on Si, InGaP, CIGS, and perovskite solar cells

被引:0
作者
Okuno, Yasuki [1 ,2 ]
Kamikawa, Yukiko [3 ]
Imaizumi, Mitsuru [4 ]
Okamoto, Tamotsu [5 ]
Otsuka, Sho [1 ]
Kobayashi, Tomohiro [1 ]
Otake, Yoshie [1 ]
机构
[1] RIKEN, RAP, 2-1 Hirosawa, Wako, Saitama 3510198, Japan
[2] Tohoku Univ, CFReND, 6-3 Aoba-Aoba,Aoba Ku, Sendai, Miyagi 9800845, Japan
[3] AIST, 1-1-1 Higashi, Tsukuba, Ibaraki 3058561, Japan
[4] Sanjo City Univ, 5002-5 Kamisukoro, Sanjo, Niigata 9550091, Japan
[5] NIT, Kisarazu Coll, 2-11-1 Kiyomidai Higashi, Kisarazu City, Chiba 2920041, Japan
关键词
solar cell; radiation detector; Si; CIGS; InGaP; perovskite; CdTe; HIGH-EFFICIENCY MULTIJUNCTION; ENERGY;
D O I
10.35848/1347-4065/add941
中图分类号
O59 [应用物理学];
学科分类号
摘要
Solar cells have become widely available consumer products due to their cost-effectiveness and high-quality performance. These devices also exhibit significant potential for applications in other fields, such as semiconductor sensors and energy conversion devices, and have been actively studied in these contexts. In this study, we focus on the potential of various solar cell materials, including Si, InGaP, CIGS, and hybrid-organic-inorganic perovskite, to function as radiation detectors. The study investigates their detection characteristics under exposure to gamma rays and seem to be depending on their absorption layer thickness and minority carrier diffusion length. Additionally, InGaP cells are investigated for their responsiveness to various types of radiation, not only gamma rays but also more challenging radiation types like electron beams and ion beams. The results demonstrate the successful analysis of radiation dose rates by measuring the current generated without depending on the kind of radiation.
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页数:4
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