A Wideband Low-Noise Amplifier for 5G and Satellite Communication

被引：0

作者：

Mao, Feng-yuan ^{[1
]}

Chen, Zhi-Jian ^{[1
]}

Li, Bin ^{[1
]}

Wu, Zhao-hui ^{[1
]}

Gum, Quansheng ^{[1
]}

Liao, Shaowei ^{[1
]}

Lin, Xiaoling ^{[2
]}

机构：

[1] South China Univ Technol, Sch Microelect, Guangzhou 510640, Guangdong, Peoples R China

[2] China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou, Guangdong, Peoples R China

来源：

2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT | 2024年

基金：

中国国家自然科学基金;

关键词：

low-noise amplifier; Gallium Nitride; noise figure; parallel RC network; GAN-BASED LNA;

D O I：

10.1109/ICMMT61774.2024.10672437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an 18.5-32.5 GHz low-noise amplifier (LNA) in 0.1-mu m Gallium Nitride (GaN) process for 5G base station applications. Transmission lines are introduced between decoupling capacitors to increase the isolation of RF choke. A parallel RC network is used in the last stage to improve wideband output return loss. The proposed LNA shows a peak gain of 23.2 dB with a 3-dB bandwidth from 18.5 to 32.5 GHz. The in-band noise figure (NF) is 0.65-0.9 dB. The input return loss and output return loss are both better than 10 dB. The LNA consumes 290mW and occupies a compact chip area of 2.2 x1.3 mm(2).

引用

页数：3

共 8 条

[1] 25-31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications [J].

Ahn, Hyun Bae ;

Ji, Hong-Gu ;

Choi, Yunho ;

Lee, Sanghun ;

Kang, Dong Min ;

Han, Junghwan .

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (01) :47-50

[2]

Cui G., 2023, 2023 INT C MICR MILL, P1, DOI [10.1109/ICMMT58241.2023.10277502, DOI 10.1109/ICMMT58241.2023.10277502]

[3] A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology [J].

Thome, Fabian ;

Brueckner, Peter ;

Leone, Stefano ;

Quay, Ruediger .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2022, 70 (02) :1367-1376

[4] A 22-30-GHz GaN Low-Noise Amplifier With 0.4-1.1-dB Noise Figure [J].

Tong, Xiaodong ;

Zhang, Shiyong ;

Zheng, Penghui ;

Huang, Yang ;

Xu, Jianxing ;

Shi, Xiangyang ;

Wang, Rong .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2019, 29 (02) :134-136

[5] Sub-1-ms Instinctual Interference Adaptive GaN LNA Front End With Power and Linearity Tuning [J].

Yang, Jie ;

Chatterjee, Baibhab ;

Khater, Mohammad Abu ;

Thorsell, Mattias ;

Gunnarsson, Sten E. ;

Kiuru, Tero ;

Edward, Brian ;

Sen, Shreyas .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2023, 71 (09) :4037-4051

[6] Robust GaN-Based LNAs With Active Epitaxial Current Limiters [J].

Zhang, Shiyong ;

Liu, Li ;

Xu, Jianxing ;

Wang, Rong ;

Zheng, Penghui ;

Wang, Hanbin ;

Li, Ming ;

Kong, Xin ;

Tong, Xiaodong .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (12) :1287-1290

[7] An 18-31-GHz GaN-Based LNA With 0.8-dB Minimum NF and High Robustness [J].

Zhang, Shiyong ;

Xu, Jianxing ;

Zheng, Penghui ;

Wang, Rong ;

Tong, Xiaodong .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2020, 30 (09) :896-899

[8]

Zhiyuan S., 2022, 2022 INT C MICR MILL, P01, DOI [10.1109/ICMMT55580.2022.10022720, DOI 10.1109/ICMMT55580.2022.10022720]

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