Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy

被引：0

作者：

Hardy, Matthew T. ^{[1
]}

Lang, Andrew C. ^{[1
]}

Hart, James L. ^{[2
]}

Jin, Eric N. ^{[1
]}

Nepal, Neeraj ^{[1
]}

Gokhale, Vikrant J. ^{[1
]}

Downey, Brian P. ^{[1
]}

Katzer, D. Scott ^{[1
]}

Litwin, Peter M. ^{[3
]}

Sales, Maria Gabriela ^{[3
]}

Growden, Tyler A. ^{[1
]}

Wheeler, Virginia D. ^{[1
]}

机构：

[1] US Naval Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA

[2] Nova Res Inc, 1900 Elkin St 230, Alexandria, VA 22308 USA

[3] Natl Acad Sci, Natl Res Council, 2101 Constitut Ave NW, Washington, DC 20418 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2025年 / 54卷 / 06期

关键词：

ScAlN; AlScN; molecular beam epitaxy; heteroepitaxy; anomalously oriented grains; stress; THICKNESS DEPENDENCE; THIN-FILMS; RESONATORS; AL1-XSCXN; STRESS; ALN;

D O I：

10.1007/s11664-024-11673-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the growth of epitaxial ScxAl1-xN (x = 0.3-0.4) on (111) Si substrates via molecular beam epitaxy. Growth of an AlN nucleation layer (NL) is sensitive to the III/V flux ratio, with more N-rich growth conditions leading to evidence of grain tilt and a degradation in the structural quality of subsequently grown ScAlN. Utilizing the optimized AlN NL III/V of 0.9, ScxAl1-xN films were grown with x = 0.3-0.4 having an x-ray diffraction 0002 reflection rocking curve full width at half maximum (FWHM) of 0.69 degrees-1.14 degrees. Incorporation of a graded ScAlN initiation layer is shown to reduce the FWHM and tensile stress magnitude, while yielding a film with rms roughness as low as 0.57 nm and no detectable anomalously oriented grains on the sample surface.

引用

页码：4291 / 4298

页数：8

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