Mg2Si synthesis on silicon crystals with different aspect ratio

被引：0

作者：

Subbotin, E. Yu. ^{[1
]}

Kozlov, A. G. ^{[2
]}

Goroshko, D. L. ^{[1
]}

Chernev, I. M. ^{[1
]}

Khoroshilov, D. A. ^{[1
]}

Lisenkov, O. E. ^{[1
]}

Zhizhchenko, A. Yu. ^{[1
]}

Kitan', S. A. ^{[1
]}

Galkin, N. G. ^{[1
]}

机构：

[1] RAS, Inst Automat & Control Proc, FEB, Vladivostok, Russia

[2] Far Eastern Fed Univ, Vladivostok, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2024年 / 17卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

silicon; magnesium silicide; Mg2Si; epitaxy; metal-assisted chemical etching; MACE; Raman; SEM;

D O I：

10.18721/JPM.173.205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the paper synthesis of magnesium silicide (Mg2Si) features on silicon crystal with different aspect ratio were observed. These crystals were etched from monocrystalline borondoped silicon wafers with (100) orientation by metal-assisted chemical etching. The synthesis was occurred in ultra-high vacuum condition by a solid phase epitaxy and the modified reactive epitaxy with ultrafast Mg deposition. The substrate temperature range in both methods was 340-390 degrees C. As result co-axial core-shell Si/Mg2Si heterostructures with magnesium silicide thickness 500-1200 nm were produced.

引用

页码：31 / 35

页数：5

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