Ultra-minimally Invasive Current Measurement in Fast Switching GaN Devices using Optical Probe Current Sensor

被引：0

作者：

Sue, Satoshi ^{[3
]}

Miyamoto, Mitsunori ^{[1
]}

Kubo, Toshiya ^{[1
]}

Sonehara, Makoto ^{[2
]}

Sato, Toshiro ^{[2
]}

Nagahama, Ryu ^{[3
]}

机构：

[1] CITIZEN FINEDEVICE CO., LTD., 4107-5, Miyota, Miyota-machi, Kitasaku-gun, Nagano

[2] Shinshu University, 4-17-1, Wakasato, Nagano

[3] IWATSU ELECTRIC CO., LTD., 1-7-41, Kugayama, Suginami-ku, Tokyo

来源：

IEEJ Transactions on Fundamentals and Materials | 2025年 / 145卷 / 02期

关键词：

current measurement; double pulse test; Faraday-effect; GaN HEMT; optical probe current sensor; power semiconductor;

D O I：

10.1541/ieejfms.145.37

中图分类号：

学科分类号：

摘要：

Previously, the authors have proposed a contactless probe-type current sensor with low insertion impedance. In this paper, the insertion impedance of the proposed current sensor at high frequencies are clarified. Then, we measured the actual high-speed switching current flowing through a GaN device and compared the measured waveforms with those of a coaxial-type shunt resistor. Comparison of the measured waveforms showed that the coaxial shunt resistor exhibited ringing in the waveform due to the effect of insertion impedance, but the proposed current sensor exhibited less ringing, indicating that the measurement is minimally invasive to the circuit under test. © 2025 The Institute of Electrical Engineers of Japan.

引用

页码：37 / 43

页数：6

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