Design of High-Power Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology

被引：0

作者：

Li, Zhenbing ^{[1
]}

Jia, Shilin ^{[1
]}

Zhang, Jinrong ^{[1
]}

Fu, Jialong ^{[1
]}

Huang, Junjie ^{[1
]}

Fang, Xiaochuan ^{[2
]}

Li, Gang ^{[3
]}

Wen, Guangjun ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Informat & Commun Engn, Chengdu, Sichuan, Peoples R China

[2] Queen Mary Univ London, Sch Elect Engn & Comp Sci, Antennas & Electromagnet Res Grp, London E1 4NS, England

[3] Univ Elect Sci & Technol China, Sch Informat & Software Engn, Chengdu, Sichuan, Peoples R China

来源：

COMPUTER NETWORKS AND IOT, PT 3, IAIC 2023 | 2024年 / 2060卷

关键词：

BDS-3; Terminal; High-power; Class-F Power Amplifier; temperature-insensitive adaptive bias; short message function;

D O I：

10.1007/978-981-97-1332-5_9

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

With the development and popularization of Beidou-3 navigation satellite system (BDS-3), to ensure its unique short message function it is necessary to integrate a radio frequency (RF) power amplifier (PA) with high performance. Therefore, in this paper, an L-band high-power 10 W PA chip is designed in InGaP/GaAs heterojunction bipolar transistor (HBT) technology combined with temperature-insensitive adaptive bias technology, class-F harmonic suppression technology, andLGApackaging technology. The linear gain of the PAchip reaches 37.1 dB and P-1dB reaches 40.6 dBm. The results show that the PA chip has high power, high gain, and high linearity, which has obvious advantages over similar PA chip designs and can meet the short message functions of the BDS-3 terminals in various application scenarios.

引用

页码：108 / 118

页数：11

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