DFT-based Prediction of promising structural, elastic and Thermoelectronic properties in BaAgX3 (X= I, Br, and Cl) halide perovskites

被引:1
作者
Mekhalefbenhafsa, L. [1 ,2 ]
Azzaz, Y. [3 ]
Berrahal, M. [4 ]
Bensaid, D. [2 ]
Zenati, A. [3 ]
机构
[1] Univ Belhadj Bouchaib, Fac Sci & Technol, Ain Temouchent 46000, Algeria
[2] Univ Djillali Liabes Sidi Bel Abbes, Lab Magnet Mat, Sidi Bel Abbes 22000, Algeria
[3] Univ Djillali Liabes Sidi Bel Abbes, Lab Physicochem Adv Mat, Sidi Bel Abbes 22000, Algeria
[4] Natl Super Sch ENS Oran, Dept Phys, Oran, Algeria
关键词
Wien2k code; TB-mBJ; Halide perovskites; Elastic properties; Figure of merit; THERMAL-CONDUCTIVITY;
D O I
10.1016/j.cocom.2024.e00982
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The aim of this research is to explore the structural, electronic, elastic, mechanical and thermoelectric properties of inorganic halide perovskites BaAgX3 (X = I, Br, and Cl) through theoretical calculations guided by Density Functional Theory (DFT). We performed our computations using full potential linearized augmented plane wave (FP-LAPW) method, combined with the generalized gradient approximation (GGA-PBE) and Tran-Blaha modified Beck-Johnson (TB-mBJ) approximations to model the exchange-correlation potential as generated by the Wien2k code. The structural parameters, such as the lattice constant were calculated and found to be in excellent agreement with existing theoretical results, and the formation energy evaluation verifies the chemical stability of the compounds. Electronic properties derived from band structure and density of states for all compounds show a semiconducting behavior with an indirect band gap. Electron density mapping identifies covalent bonding in (Ag-X) and ionic bonding in (Ba-X). The elastic and mechanical properties were also computed, revealing that the compounds concerned are mechanically stable following Born stability criteria and exhibit both ductility and anisotropic character. Finally, the thermoelectric properties of halide perovskites were investigated using the BoltzTraP code. The analysis focused on key parameters like Seebeck coefficient, electrical conductivity, power factor, and figure of merit (ZT) across a temperature range of 300-1200 K. The results highlight the promising potential of these materials for both optoelectronic and thermoelectric applications due to their semiconductor and thermoelectric properties.
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页数:12
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